TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.03 Ω |
Polarity | N-CH |
Power Dissipation | 430 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 250 V |
Continuous Drain Current (Ids) | 23A |
Input Capacitance (Ciss) | 7290pF @25V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 430W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRFP4232PBF is a 250V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
● 175°C Operating temperature
● Low QG for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
Infineon
10 Pages / 0.2 MByte
Infineon
9 Pages / 0.28 MByte
International Rectifier
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-247AC package
International Rectifier
Trans MOSFET N-CH 150V 23A 3Pin(3+Tab) TO-247AC T/R
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