| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 310 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.012 Ω |
| Polarity | N-Channel |
| Power Dissipation | 310 mW |
| Threshold Voltage | 5 V |
| Input Capacitance | 4460 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 78A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 4460pF @25V(Vds) |
| Input Power (Max) | 310 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Low RDS (ON) reduces losses
● Low gate charge improves the switching performance
● Fully characterized avalanche SOA
● 30V Gate voltage rating improves robustness
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International Rectifier
MOSFET N-CH 150V 78A TO-247AC
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150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International Rectifier
Trans MOSFET N-CH 150V 78A 3Pin(3+Tab) TO-247AC Tube
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