| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 370 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0034 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 11360 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 330 ns |
| Input Capacitance (Ciss) | 11360pF @50V(Vds) |
| Input Power (Max) | 370 W |
| Fall Time | 170 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Optimized for logic level drive
● Very low RDS (ON) at 4.5V VGS
● Superior R
●Q at 4.5V VGS
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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