TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 140 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0033 Ω |
Polarity | N-Channel |
Power Dissipation | 140 W |
Threshold Voltage | 2.3 V |
Input Capacitance | 4380pF @15V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 161A |
Rise Time | 42 ns |
Input Capacitance (Ciss) | 4380pF @15V(Vds) |
Input Power (Max) | 140 W |
Fall Time | 19 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR7843PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Optimized for logic level drive
● Very low RDS (ON) at 4.5V VGS
● Superior R
●Q at 4.5V VGS
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
International Rectifier
MOSFET N-CH 30V 161A DPAK
International Rectifier
MOSFET N-CH 30V 161A DPAK
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