TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 16.0 A |
Case/Package | TO-247-3 |
Power Rating | 280 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.4 Ω |
Polarity | N-Channel |
Power Dissipation | 280 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 16.0 A |
Rise Time | 54 ns |
Input Capacitance (Ciss) | 3900pF @25V(Vds) |
Input Power (Max) | 280 W |
Fall Time | 56 ns |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ |
The IRFPC60PBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
VISHAY
9 Pages / 2.37 MByte
VISHAY
9 Pages / 2.37 MByte
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