| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 89 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 65 mΩ |
| Polarity | P-CH |
| Power Dissipation | 110 W |
| Input Capacitance | 1200 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 66 ns |
| Reverse recovery time | 71 ns |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 63 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 175℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
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