| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 230 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 210A |
| Rise Time | 123 ns |
| Input Capacitance (Ciss) | 8250pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3703PBF is a HEXFET® N-channel Power MOSFET offers low gate impedance to reduce switching losses. It is suitable for synchronous rectification and active O-ring.
● Ultra-low ON-resistance
● Fully avalanche rating
Infineon
9 Pages / 0.17 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 30V 210A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.3Milliohms; ID 210A; TO-220AB; PD 230W; -55de
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