| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 140 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 110A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 4360pF @25V(Vds) |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 140W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR7540TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
12 Pages / 0.56 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
6 Pages / 0.11 MByte
Infineon
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
Trans MOSFET N-CH 60V 110A 3Pin(2+Tab) DPAK T/R
International Rectifier
Single N-Channel 60V 4mOhm 86NC SMT Hexfet Power Mosfet - TO-252AA
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
