| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 380 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 380 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 56A |
| Rise Time | 64 ns |
| Input Capacitance (Ciss) | 4220pF @25V(Vds) |
| Input Power (Max) | 380 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 380W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB260NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate-to-drain charge to reduce switching losses
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
9 Pages / 0.16 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)max=0.04Ω/ Id=56A)
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.04Ω, Id=56A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 56A; TO-220AB; PD 380W; VGS +/-20V
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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