| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Power Rating | 2 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 2.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 88 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 0.6A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 88pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.5 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF5801TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters, DC switches and load switch.
● Fully characterized avalanche voltage and current
● Fully characterized capacitance including effective COSS to simplify design
● Halogen-free
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200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
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200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
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