TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-261-4 |
Power Rating | 2.8 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.185 Ω |
Polarity | N-Channel |
Power Dissipation | 2.8 W |
Threshold Voltage | 5 V |
Input Capacitance | 420pF @25V |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 2.6A |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 420pF @25V(Vds) |
Fall Time | 19 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.8W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.8 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFL4315PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
● Surface mount
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3 Pages / 0.16 MByte
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