| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 75 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Polarity | N-CH |
| Power Dissipation | 75 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 86A |
| Rise Time | 49 ns |
| Input Capacitance (Ciss) | 2150pF @15V(Vds) |
| Input Power (Max) | 75 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR8726PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
● Very low RDS (ON) at 4.5V VGS
● Ultra-low gate impedance
● Fully characterized avalanche voltage and current
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30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
Trans MOSFET N-CH 30V 86A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 30V 86A 3Pin(2+Tab) DPAK T/R
International Rectifier
The IRLR8726PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
Infineon
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN
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