| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 1.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 715 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 2.9A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 875pF @25V(Vds) |
| Input Power (Max) | 1.8 W |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 40 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
● Enhancement mode
● Avalanche rated
● dv/dt Rated
● AEC-Q101 qualified
Infineon
9 Pages / 0.37 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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37 Pages / 2.01 MByte
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MOSFET P-Ch -60V -2.9A SOT-223-3
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