TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0078 Ω |
Polarity | N-Channel |
Power Dissipation | 3.8 W |
Threshold Voltage | 4 V |
Input Capacitance | 5600 pF |
Drain to Source Voltage (Vds) | 75 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 150 ns |
Input Capacitance (Ciss) | 5600pF @25V(Vds) |
Input Power (Max) | 3.8 W |
Fall Time | 140 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.65 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
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