TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.01 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1 V |
Input Capacitance | 1585 pF |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Rise Time | 7.7 ns |
Input Capacitance (Ciss) | 1585pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 44 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The SI4410DYTRPBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate charge
● Logic level drive
● Low conduction losses
● Low switch losses
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