TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.008 Ω |
Polarity | N-CH |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Input Capacitance | 1210 pF |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 13A |
Rise Time | 6.3 ns |
Input Capacitance (Ciss) | 1210pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 3.8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7413ZTRPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The control and synchronous rectifier MOSFET is suitable for graphics cards and POL converters in telecommunication systems.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance
● 100% Tested for gate resistance
Infineon
10 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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2 Pages / 0.04 MByte
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1 Pages / 0.13 MByte
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