| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 160 A |
| Case/Package | TO-262-3 |
| Drain to Source Resistance (on) (Rds) | 4.2 mΩ |
| Power Dissipation | 230 W |
| Part Family | IRFSL3306 |
| Input Capacitance | 4520pF @50V |
| Gate Charge | 120 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 160 A |
| Input Capacitance (Ciss) | 4520pF @50V(Vds) |
| Input Power (Max) | 230 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
12 Pages / 0.31 MByte
International Rectifier
11 Pages / 0.43 MByte
International Rectifier
Trans MOSFET N-CH 60V 160A 3Pin(3+Tab) TO-262 Tube
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