| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 35.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 1900pF @25V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRFZ40PBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Fast switching
● Ease of paralleling
● Simple drive requirements
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