| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 45 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Rise Time | 26.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 42 ns |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4BC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
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