| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | Super-247-3 |
| Power Rating | 350 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 350 W |
| Rise Time | 77.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 110 ns |
| Input Power (Max) | 350 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.1 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PSH71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The ultrafast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations.
● Creepage distance increased to 5.35mm
● High efficiency
● Maximum power density
● Optimized for specific application conditions
● HEXFRED™ anti-parallel diode minimizes switching losses and EMI
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IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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