TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 11.0 A |
Case/Package | TO-262-3 |
Power Rating | 60 W |
Part Family | IRG4BH20K-L |
Rise Time | 26.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 60 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 11A 60W Through Hole TO-262
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International Rectifier
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(3+Tab) TO-262
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (2+Tab) D2PAK
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-262
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
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