TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 11.0 A |
Case/Package | TO-263-3 |
Polarity | N-Channel |
Power Dissipation | 60 W |
Part Family | IRG4BH20K-S |
Rise Time | 26 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Thermal Resistance | 2.1℃/W (RθJC) |
Input Power (Max) | 60 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ |
●Single IGBT up to 20A, Infineon
●optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs
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