TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 11.0 A |
Case/Package | TO-263-3 |
Power Rating | 60 W |
Part Family | IRG4BH20K-S |
Rise Time | 26.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 60 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 11A 60W Surface Mount D2PAK
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Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(2+Tab) D2PAK Tube
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Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (2+Tab) D2PAK
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-262
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
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