| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 60 W |
| Power Dissipation | 60000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 60 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 11A 60W Surface Mount D2PAK
Infineon
9 Pages / 0.24 MByte
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3 Pages / 0.36 MByte
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12 Pages / 0.18 MByte
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2 Pages / 0.17 MByte
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IGBT Single Transistor, 11A, 3.17V, 60W, 1.2kV, TO-263, 3Pins
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Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-262 Tube
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(3+Tab) TO-262
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (2+Tab) D2PAK
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-262
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(2+Tab) D2PAK T/R
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