| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PC50SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
Infineon
9 Pages / 0.95 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
IGBT Single Transistor, 52A, 1.84V, 104W, 600V, TO-247AC, 3Pins
Infineon
IGBT Single Transistor, 70A, 1.62V, 200W, 600V, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 52A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
