| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Input Capacitance | 3600 pF |
| Rise Time | 15.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Thermal Resistance | 40 ℃/W |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PH50UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies up to 40kHz in hard switching, >200kHz in resonant mode. The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations. It is optimized for power conversion, SMPS, UPS and welding.
● High switching frequency capability than competitive IGBTs
● High efficiency
● Much lower conduction losses than MOSFETs
● More efficient than short-circuit rated IGBTs
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