| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-274-3 |
| Power Rating | 350 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 350 W |
| Rise Time | 94.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 82 ns |
| Input Power (Max) | 350 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.6 mm |
| Size-Width | 5 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PSC71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
● Creepage distance increased to 5.35mm
● High efficiency
● Maximum power density
● Optimized for specific application conditions
● HEXFRED™ diodes optimized for performance with IGBTs
Infineon
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Trans IGBT Chip N-CH 600V 85A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 600V 85A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 600V 85A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 600V 85A 350000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 600V 85A 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 600V 85A 3Pin(3+Tab) TO-274AA
International Rectifier
Trans IGBT Chip N-CH 600V 85A 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 600V 85A 3Pin (3+Tab) TO-274AA
International Rectifier
IGBT 600V 85A 350W SUPER247
International Rectifier
IGBT 600V 85A 350W SUPER247
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