TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 160 W |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 160 W |
Rise Time | 18 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Thermal Resistance | 0.77℃/W (RθJC) |
Input Power (Max) | 160 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 160000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.9 mm |
Size-Width | 5.3 mm |
Size-Height | 20.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PH40UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies up to 40kHz in hard switching, >200kHz in resonant mode. The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations. It is optimized for power conversion, SMPS, UPS and welding.
● High switching frequency capability than competitive IGBTs
● High efficiency
● Much lower conduction losses than MOSFETs
● More efficient than short-circuit rated IGBTs
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