TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 160 W |
Power Dissipation | 160 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 63 ns |
Input Power (Max) | 160 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 160000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 15.9 mm |
Size-Width | 5.3 mm |
Size-Height | 20.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PH40KDPBF is a 1200V short-circuit rated Copack (Insulated Gate Bipolar Transistor) IGBT with ultrafast soft recovery diode. It combines low induction losses with high switching speed. The IGBT provides tighter parameter distribution and higher efficiency than previous generations. HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
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