| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 250 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Rise Time | 22.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 89 ns |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRGB4062DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Ultrafast soft recovery co-pack diode
● Tight parameter distribution
● High efficiency in a wide range of applications
● Low EMI
● 5µs Short-circuit SOA
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600V UltraFast Copack Trench IGBT in a TO-220AB package
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600V UltraFast Copack Trench IGBT in a TO-220AB package
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