| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Input Capacitance | 3300 pF |
| Rise Time | 26.0 ns |
| Breakdown Voltage (Collector to Emitter) | 900 V |
| Thermal Resistance | 40 ℃/W |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4PF50WPBF is a 900V Warp 20 to 100kHz IGBT designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses and minimal minority carrier recombination makes as an excellent option for resonant mode switching (up to >100kHz).
● 50% Reduction of Eoff parameter
● Lower switching losses allow more effective operation in replacing large die MOSFET up to 100kHz
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