| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 45.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 200 W |
| Part Family | IRG4PH50UD |
| Rise Time | 24.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Thermal Resistance | 0.64℃/W (RθJC) |
| Reverse recovery time | 90 ns |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT over 21A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
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