| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 99.0 A |
| Case/Package | TO-274 |
| Polarity | N-Channel |
| Power Dissipation | 350000 mW |
| Part Family | IRG4PSH71U |
| Rise Time | 70.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 350 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 99A 350W Through Hole SUPER-247™ (TO-274AA)
Infineon
8 Pages / 0.26 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
1 Pages / 0.12 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 78A 350000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 99A 3Pin(3+Tab) TO-274AA
International Rectifier
Trans IGBT Chip N-CH 1.2kV 78A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA
International Rectifier
Trans IGBT Chip N-CH 1.2kV 78A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 78A 350000mW 3Pin(3+Tab) TO-274AA
International Rectifier
1200V UltraFast 4-20kHz Discrete IGBT in a TO-274AA package
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