| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 31.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 139 W |
| Part Family | IRGB15B60KD |
| Rise Time | 16 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 92 ns |
| Input Power (Max) | 208 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.66 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT over 21A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
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IGBT Single Transistor, 31A, 600V, 139W, 600V, TO-220AB, 3Pins
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