TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 99.0 A |
Case/Package | TO-274-3 |
Polarity | N-Channel |
Power Dissipation | 215 W |
Part Family | IRG4PSH71UD |
Rise Time | 77.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 110 ns |
Input Power (Max) | 350 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.54 mm |
Size-Width | 5 mm |
Size-Height | 15.24 mm |
Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT over 21A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
11 Pages / 0.23 MByte
International Rectifier
20 Pages / 2.6 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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Infineon
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Infineon
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International Rectifier
Trans IGBT Chip N-CH 1.2kV 78A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 78A 350000mW 3Pin(3+Tab) TO-274AA
International Rectifier
1200V UltraFast 4-20kHz Discrete IGBT in a TO-274AA package
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