| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 313000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 313 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT Trench 1200V 85A 313W Through Hole TO-247AD
Infineon
10 Pages / 0.31 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
55 Pages / 1.73 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AD Tube
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