| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 215 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 215 W |
| Rise Time | 5.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 0.58℃/W (RθJC) |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 215 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 215000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRGB20B60PD1PBF is a 600V Warp2 IGBT with ultrafast soft recovery diode. Parallel operation for higher current applications and lower conduction losses and switching losses. Suitable for use in telecom and server SMPS, PFC and ZVS SMPS circuits.
● Higher switching frequency up to 150kHz
● NPT technology, positive temperature coefficient
● Lower VCE (SAT)
● Lower parasitic capacitances
● Minimal tail current
● HEXFRED ultra fast soft-recovery co-pack diode
● Tighter distribution of parameters
● Higher reliability
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