| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 105 A |
| Case/Package | Super-247-3 |
| Polarity | N-Channel |
| Power Dissipation | 595 W |
| Part Family | IRGPS60B120KD |
| Rise Time | 32 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 180 ns |
| Input Power (Max) | 595 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT over 21A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
12 Pages / 0.13 MByte
International Rectifier
14 Pages / 0.22 MByte
Infineon
Trans IGBT Chip N-CH 1200V 105A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 105A 3Pin(3+Tab) TO-274AA
International Rectifier
IGBT 1200V 105A 595W SUPER247
International Rectifier
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, SUPER-247, 3 PIN
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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