| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 52 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 77 ns |
| Input Power (Max) | 52 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 52000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT NPT 600V 7.8A 52W Surface Mount D-Pak
Infineon
14 Pages / 0.3 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
22 Pages / 0.35 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
Trans IGBT Chip N-CH 600V 7.8A 3Pin (2+Tab) DPAK
International Rectifier
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK Tube
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
