| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 130 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.008 Ω |
| Polarity | N-Channel |
| Power Dissipation | 130 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 86A |
| Rise Time | 240 ns |
| Input Capacitance (Ciss) | 2880pF @25V(Vds) |
| Input Power (Max) | 130 W |
| Fall Time | 83 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL3705ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Logic level
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.36 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 55V 86A 3Pin(3+Tab) TO-220AB Tube
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Trans MOSFET N-CH 55V 89A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 6.5Milliohms; ID 75A; D2Pak; PD 130W; VGS +/-16
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