TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | Direct-FET |
Power Rating | 75 W |
Number of Channels | 1 Channel |
Number of Positions | 7 Position |
Drain to Source Resistance (on) (Rds) | 2.4 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.8 W |
Threshold Voltage | 1.8 V |
Input Capacitance | 4280 pF |
Drain to Source Voltage (Vds) | 25 V |
Breakdown Voltage (Drain to Source) | 25 V |
Continuous Drain Current (Ids) | 32A |
Rise Time | 27 ns |
Input Capacitance (Ciss) | 4280pF @13V(Vds) |
Input Power (Max) | 2.8 W |
Fall Time | 11 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 2.8W (Ta), 75W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.45 mm |
Size-Width | 5.05 mm |
Size-Height | 0.53 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
N-Channel 25 V 2.8 W 35 nC Surface Mount HEXFET Power Mosfet - DirectFET
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