| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.24 Ω |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 2.2A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 1280pF @25V(Vds) |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF6216PBF is a HEXFET® single P-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses and fully characterized avalanche voltage and current. It is suitable for reset switch for active clamp reset DC-to-DC converters.
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
● Fully characterized capacitance including effective COSS to simplify design
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2 Pages / 0.17 MByte
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MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.24Ω; ID -2.2A; SO-8; PD 2.5W; VGS +/-20V
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-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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