| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 130 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.012 Ω |
| Polarity | N-Channel |
| Power Dissipation | 130 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2900 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 81A |
| Rise Time | 66 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP054NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
9 Pages / 1.45 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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International Rectifier
MOSFET N-CH 60V 70A TO-247AC
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
Infineon
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.014Ω, Id=70*A)
VISHAY
TO-247-3 N-CH 60V 70A 14mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ω; ID 81A; TO-247AC; PD 170W; VGS +/-20V
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