| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 100 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1500 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 53A |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 1500pF @25V(Vds) |
| Input Power (Max) | 120 W |
| Fall Time | 52 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP044NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
9 Pages / 1.5 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.03 MByte
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1 Pages / 0.12 MByte
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028Ω, ID = 57A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.028Ω, Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.02Ω; ID 53A; TO-247AC; PD 120W; VGS +/-20V
International Rectifier
MOSFET N-CH 55V 53A TO-247AC
Vishay Siliconix
MOSFET N-CH 60V 57A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 57A 3Pin(3+Tab) TO-247AC
IFC
N-Channel 55V 0.02Ω 61NC Flange Mount Hexfet Power Mosfet - TO-247AC
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