TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 100 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.02 Ω |
Polarity | N-Channel |
Power Dissipation | 100 W |
Threshold Voltage | 4 V |
Input Capacitance | 1500 pF |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 53A |
Rise Time | 80 ns |
Input Capacitance (Ciss) | 1500pF @25V(Vds) |
Input Power (Max) | 120 W |
Fall Time | 52 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 120W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.9 mm |
Size-Width | 5.3 mm |
Size-Height | 20.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP044NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
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International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028Ω, ID = 57A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.028Ω, Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.02Ω; ID 53A; TO-247AC; PD 120W; VGS +/-20V
International Rectifier
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Vishay Semiconductor
Trans MOSFET N-CH 60V 57A 3Pin(3+Tab) TO-247AC
Vishay Siliconix
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IFC
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