TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 188 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0033 Ω |
Polarity | N-Channel |
Power Dissipation | 188 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 90A |
Rise Time | 70 ns |
Input Capacitance (Ciss) | 11000pF @30V(Vds) |
Input Power (Max) | 188 W |
Fall Time | 5 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 188W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPP040N06N3 G is a N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of applications including solar micro inverter and fast switching DC-to-DC converter.
● Very low ON-resistance R DS(on)
● Ideal for fast switching applications
● Halogen-free
● MSL1 rated
● Less paralleling required
● Increased power density
● Very low voltage overshoot
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