TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 48 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.008 Ω |
Polarity | N-Channel |
Power Dissipation | 63 W |
Threshold Voltage | 4 V |
Input Capacitance | 4000pF @25V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 64A |
Rise Time | 100 ns |
Input Capacitance (Ciss) | 4000pF @25V(Vds) |
Fall Time | 70 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 63W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.75 mm |
Size-Width | 4.83 mm |
Size-Height | 9.8 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFI3205PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw.
● Advanced process technology
● Ultra-low ON-resistance
● Isolated package
● Fully avalanche rating
● 2.5kVRMS High voltage isolation
● 4.8mm Sink to lead creepage distance
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8 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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2 Pages / 0.06 MByte
International Rectifier
Trans MOSFET N-CH 55V 64A 3Pin (3+Tab) TO-220
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.008Ω, Id=64A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 64A; TO-220 Full-Pak; PD 63W; -55de
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