| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 3.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.056 Ω |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 33A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 2020pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB33N15DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 150V 33A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET N-CH 150V 33A TO-220AB
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.056Ω, Id=33A)
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