| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 75 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω |
| Polarity | N-Channel |
| Power Dissipation | 75 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 65A |
| Rise Time | 4.2 ns |
| Input Capacitance (Ciss) | 1030pF @15V(Vds) |
| Input Power (Max) | 75 W |
| Fall Time | 3.2 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR7821PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
● Ultra-low gate impedance
● Very low RDS (ON) at 4.5V VGS
● Logic level
Infineon
12 Pages / 0.31 MByte
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270 Pages / 11.59 MByte
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9 Pages / 0.28 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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6 Pages / 0.15 MByte
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12 Pages / 0.31 MByte
International Rectifier
Trans MOSFET N-CH 30V 65A 3Pin (2+Tab) DPAK
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Trans MOSFET N-CH 30V 65A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
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