| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 3.8 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | N-Channel |
| Power Dissipation | 136 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 8.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 19.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB23N15DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.09Ω/ Id=23A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=23A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ω; ID 23A; TO-220AB; PD 136W; VGS +/-30V
International Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagem
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