| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 230 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
| Polarity | N-CH |
| Power Dissipation | 230 W |
| Threshold Voltage | 1.9 V |
| Input Capacitance | 8420 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 260A |
| Rise Time | 170 ns |
| Input Capacitance (Ciss) | 8420pF @15V(Vds) |
| Input Power (Max) | 230 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLB3813PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is optimized for UPS/inverter applications. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
● Ultra-low gate impedance
● Very low RDS (ON) at 4.5V VGS
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